Description
EM-Tec M-10 with a 10µm pitch grid pattern is useful for calibration or image distortion assessments in the 100x to 1000x magnification range. Pattern size is 3x3mm with lines directly etched in a conductive ultra-flat silicon substrate. Lines are 300nm deep with a width of 300nm for 10µm lines and 400nm for 100µm lines. Alternatively, small samples can be placed direction on the grid pattern for immediate calibration or integrated calibration in the image. This standard is NIST traceable; example of wafer level certificate of traceability for the Em-Tec M-10 grid pattern calibration standard.
Intended for SEM, table top SEM, FIB, Auger, SIMS and reflected light microscopy.
